? 2014 ixys corporation, all rights reserved symbol test conditions maximum ratings v dss t j = 25 ? c to 150 ? c 800 v v dgr t j = 25 ? c to 150 ? c, r gs = 1m ? 800 v v gss continuous ? 30 v v gsm transient ? 40 v i d25 t c = 25 ? c 24 a i dm t c = 25 ? c, pulse width limited by t jm 80 a i a t c = 25 ? c 32a e as t c = 25 ? c3j dv/dt i s ? i dm , v dd ? v dss , t j ? 150 ? c 50 v/ns p d t c = 25 ? c 500 w t j -55 ... +150 ? c t jm 150 ? c t stg -55 ... +150 ? c t l maximum lead temperature for soldering 300 c t sold plastic body for 10s 260 c v isol 50/60 hz, 1 minute 2500 ?????????????????? v ? f c mounting force 20..120/4.5..27 n/lb weight 5 g symbol test conditions characteristic values (t j = 25 ? c unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 1ma 800 v v gs(th) v ds = v gs , i d = 4ma 3.0 6.0 v i gss v gs = ? 30v, v ds = 0v ????????????????????? 200 na i dss v ds = 0.8 ? v dss , v gs = 0v 50 ? a t j = 125 ? c 2 ma r ds(on) v gs = 10v, i d = 16a, note 1 300 m ? hiperfet tm power mosfet q3-class IXFR32N80Q3 v dss = 800v i d25 = 24a r ds(on) ? ? ? ? ? 300m ? ? ? ? ? t rr ? ? ? ? ? 300ns ds100362b(01/14) n-channel enhancement mode fast intrinsic rectifier avalanche rated features ? silicon chip on direct-copper bond (dcb) substrate ? isolated mounting surface ? low intrinsic gate resistance ? 2500v~ electrical isolation ? fast intrinsic rectifier ? avalanche rated ? low package inductance advantages ? high power density ? easy to mount ? space savings applications ? dc-dc converters ? battery chargers ? switch-mode and resonant-mode power supplies ? dc choppers ? temperature and lighting controls (electrically isolated tab) g = gate d = drain s = source isoplus247 e153432 g s d isolated tab
IXFR32N80Q3 ixys reserves the right to change limits, test conditions, and dimensions. ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 note 1. pulse test, t ? 300 ? s, duty cycle, d ? 2%. symbol test conditions characteristic values (t j = 25 ? c unless otherwise specified) min. typ. max. g fs v ds = 20v, i d = 16a, note 1 16 26 s c iss 6940 pf c oss v gs = 0v, v ds = 25v, f = 1mhz 700 pf c rss 63 pf r gi gate input resistance 0.16 ?? t d(on) 38 ns t r 13 ns t d(off) 45 ns t f 10 ns q g(on) 140 nc q gs v gs = 10v, v ds = 0.5 ? v dss , i d = 16a 48 nc q gd 63 nc r thjc 0.25 ?? c/w r thcs 0.15 ? c/w source-drain diode symbol test conditions characteristic values (t j = 25 ? c unless otherwise specified) min. typ. max. i s v gs = 0v 32 a i sm repetitive, pulse width limited by t jm 128 a v sd i f = i s , v gs = 0v, note 1 1.4 v t rr 300 ns q rm 1.4 ?? c i rm 12.0 a resistive switching times v gs = 10v, v ds = 0.5 ? v dss , i d = 16a r g = 1 ? (external) i f = 16a, -di/dt = 100a/ ? s v r = 100v, v gs = 0v 1 = gate 2,4 = drain 3 = source isoplus247 (ixfr) outline b1 b2 b a1 c e
? 2014 ixys corporation, all rights reserved IXFR32N80Q3 fig. 1. output characteristics @ t j = 25oc 0 4 8 12 16 20 24 28 32 012345678 v ds - volts i d - amperes v gs = 10v 9v 8v 7v fig. 2. extended output characteristics @ t j = 25oc 0 10 20 30 40 50 60 70 80 0 5 10 15 20 25 30 v ds - volts i d - amperes v gs = 10v 7v 8v 9v fig. 3. output characteristics @ t j = 125oc 0 4 8 12 16 20 24 28 32 0 2 4 6 8 1012141618 v ds - volts i d - amperes 6v 7v v gs = 10v 8v fig. 4. r ds(on) normalized to i d = 16a value vs. junction temperature 0.2 0.6 1.0 1.4 1.8 2.2 2.6 3.0 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 16a i d = 32a fig. 5. r ds(on) normalized to i d = 16a value vs. drain current 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 0 1020304050607080 i d - amperes r ds(on) - normalized v gs = 10v t j = 125oc t j = 25oc fig. 6. maximum drain current vs. case temperature 0 4 8 12 16 20 24 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes
IXFR32N80Q3 ixys reserves the right to change limits, test conditions, and dimensions. fig. 7. input admittance 0 5 10 15 20 25 30 35 40 45 50 4 4.5 5 5.5 6 6.5 7 7.5 8 8.5 9 9.5 v gs - volts i d - amperes t j = 125oc - 40oc 25oc fig. 8. transconductance 0 10 20 30 40 50 60 0 5 10 15 20 25 30 35 40 45 50 55 i d - amperes g f s - siemens t j = - 40oc 125oc 25oc fig. 9. forward voltage drop of intrinsic diode 0 10 20 30 40 50 60 70 80 90 100 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 v sd - volts i s - amperes t j = 125oc t j = 25oc fig. 10. gate charge 0 2 4 6 8 10 12 14 16 0 50 100 150 200 q g - nanocoulombs v gs - volts v ds = 400v i d = 16a i g = 10ma fig. 11. capacitance 10 100 1,000 10,000 100,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarad s f = 1 mhz c iss c rss c oss fig. 12. forward-bias safe operating area 1 10 100 10 100 1,000 v ds - volts i d - amperes t j = 150oc t c = 25oc single pulse 100s 1ms r ds(on) limit 25s
? 2014 ixys corporation, all rights reserved ixys ref: f_32n80q3(r8) 7-13-11 IXFR32N80Q3 fig. 13. maximum transient thermal impedance 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 100 pulse width - seconds z (th)jc - oc / w
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